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Zorluk: OrtaMulti-Sentence Synthesis Inferences

Passage:
In the early 2000s, semiconductor manufacturers faced physical limits when attempting to shrink silicon transistors using conventional deep ultraviolet (DUV) immersion lithography. To surpass these constraints, industry leaders invested in extreme ultraviolet (EUV) lithography, a process requiring high-power tin-plasma light sources and specialized mirrors operating in a vacuum. However, early EUV scanners suffered from extremely short collector mirror lifespans due to heavy debris bombardment from the tin-plasma generation. Consequently, many chipmakers opted to extend DUV lithography through complex multi-patterning techniques rather than adopt EUV prematurely. Multi-patterning increased the number of exposure steps per wafer—raising production costs and lowering manufacturing yields—yet it allowed fabrication plants to utilize existing, fully depreciated DUV equipment without committing massive capital to unproven EUV infrastructure. By 2018, breakthroughs in hydrogen-gas flushing systems significantly mitigated tin-debris deposition on EUV collector mirrors, stabilizing operational uptime and dramatically reducing mirror replacement costs. As a result, major foundries that had deferred EUV deployment were able to transition directly to commercial EUV production for sub-7-nanometer nodes without incurring the severe financial losses suffered by early EUV adopters who attempted integration prior to the hydrogen-flushing innovation.

Based on the passage, which of the following can be inferred about the semiconductor manufacturers that extended DUV lithography through multi-patterning prior to 2018?

  1. They accepted higher operational expenses per wafer to avoid upfront capital investment in EUV technology until collector mirror degradation issues were resolved.Cevap
  2. B
    They suffered greater financial losses than early EUV adopters because the cumulative costs of multi-patterning exceeded the price of new EUV scanners.
  3. C
    They directly developed the hydrogen-gas flushing technology to accelerate their own eventual transition to EUV lithography.
  4. D
    They derived no economic benefit from multi-patterning DUV lithography prior to 2018 due to reduced chip yields and extra exposure steps.
  5. E
    They were ultimately unable to produce sub-7-nanometer nodes because DUV lithography could not achieve sufficient transistor density.

Cevap

Semiconductor manufacturers that extended DUV lithography through multi-patterning accepted higher operational expenses per wafer in order to avoid upfront capital investment in unproven EUV technology until collector mirror degradation issues were resolved.
The correct answer combines evidence from two parts of the passage: the discussion of pre-2018 multi-patterning (which increased per-wafer costs but saved capital by using fully depreciated equipment) and the discussion of 2018 hydrogen-flushing advances (which solved the mirror degradation problem and allowed safe EUV deployment).

Adım Adım Çözüm

1
Analyze the question stem to locate target statements regarding pre-2018 multi-patterning DUV users.
Identify key facts across the passage: multi-patterning increased per-wafer costs and reduced yields, but allowed use of fully depreciated DUV tools without committing capital to unproven EUV infrastructure.
Synthesizing multi-sentence evidence is required to evaluate the economic tradeoff made by these manufacturers.
2
Integrate findings from later sentences regarding the 2018 technological breakthrough.
Note that 2018 hydrogen flushing solved the tin-debris issue on EUV collector mirrors, enabling deferred adopters to transition safely to EUV without early financial losses.
Connecting the rationale for deferral with the post-2018 outcome provides the complete logical basis for the inference.
3
Evaluate answer choices to select the statement strictly supported by this synthesis.
The option stating that manufacturers accepted higher per-wafer costs to avoid capital risks until mirror issues were resolved directly synthesizes these non-contiguous premises.
It captures both the tradeoff described in the middle of the passage and the resolution mentioned at the end.

Anahtar Kavram

Multi-Sentence Synthesis Inference
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Multi-Sentence Synthesis Inferences

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